Fast MOS transistor mismatch optimization – a comparison between different approaches
نویسندگان
چکیده
different approaches Gregor Cijan, Tadej Tuma, Sašo Tomažič, Árpád Bűrmen 1 Regional Development Agency of Northern Primorska, Mednarodni prehod 6, Šempeter pri Gorici, Slovenia 2,3,4 University of Ljubljana, Faculty of Electrical Engineering, Tržaška 25, Ljubljana, Slovenia
منابع مشابه
Modeling and Simulation of Mos Transistor Mismatch
The paper is an overview of MOS transistor mismatch modeling and simulation over the existent literature. The fluctuations of physical parameters and line width are the main causes of mismatch. There are two types of mismatch. Systematic mismatch can be reduced to great extent with proper layout. Different patterns are available, that are able to reduce from linear to n-th order polynomial syst...
متن کاملGate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...
متن کاملGate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...
متن کاملSystematic Width-and-Length Dependent CMOS Transistor Mismatch Characterization and Simulation
This paper presents a methodology for characterizing the random component of transistor mismatch in CMOS technologies. The methodology is based on the design of a special purpose chip which allows automatic characterization of arrays of NMOS and PMOS transistors of different sizes. Up to 30 different transistor sizes were implemented in the same chip, with varying transistors width W and length...
متن کاملMOS Transistor Mismatch for High Accuracy Applications
In this paper the matching behaviour of MOS transistors is analyzed for the realization of an intrinsic– accuracy 14 bit current–steering D/A–converter. It is well known that the area of a MOS transistor is inversely proportional to the mismatch (Pelgrom mismatch model), related through a technology constant. Also the influence of metal coverage on the mismatch of MOS transistors has been repor...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2010